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Volume 7 Issue 1
Jan.  2020

IEEE/CAA Journal of Automatica Sinica

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Article Navigation >  IEEE/CAA Journal of Automatica Sinica  > 2020  >  7(1): 237-243
Yifei Pu and Bo Yu, "A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction," IEEE/CAA J. Autom. Sinica, vol. 7, no. 1, pp. 237-243, Jan. 2020. doi: 10.1109/JAS.2019.1911849
Citation: Yifei Pu and Bo Yu, "A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction," IEEE/CAA J. Autom. Sinica, vol. 7, no. 1, pp. 237-243, Jan. 2020. doi: 10.1109/JAS.2019.1911849
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A Large Dynamic Range Floating Memristor Emulator With Equal Port Current Restriction

doi: 10.1109/JAS.2019.1911849
Funds:  This work was supported by the National Key Research and Development Program of China (2018YFC0830300), the National Natural Science Foundation of China (61571312), and the Science and Technology Support Project of Chengdu PU Chip Science and Technology Co., Ltd
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    Abstract
  • In this paper, a large dynamic range floating memristor emulator (LDRFME) with equal port current restriction is proposed to be achieved by a large dynamic range floating voltage-controlled linear resistor (VCLR). Since real memristors have not been largely commercialized until now, the application of a LDRFME to memristive systems is reasonable. Motivated by this need, this paper proposes an achievement of a LDRFME based on a feasible transistor model. A first circuit extends the voltage range of the triode region of an ordinary junction field effect transistor (JFET). The idea is to use this JFET transistor as a tunable linear resistor. A second memristive non-linear circuit is used to drive the resistance of the first JFET transistor. Then those two circuits are connected together and, under certain conditions, the obtained " resistor” presents a hysteretic behavior, which is considered as a memristive effect. The electrical characteristics of a LDRFME are validated by software simulation and real measurement, respectively.

     

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  • [1]
    L. O. Chua, " Memristor—the missing circuit element,” IEEE Trans. Circuit Theory, vol. CT-18, no. 5, pp. 507–519, Sep. 1971.
    [2]
    L. O. Chua and S. M. Kang, " Memristive devices and systems,” Proc. IEEE, vol. 64, no. 2, pp. 209–223, Feb. 1976. doi: 10.1109/PROC.1976.10092
    [3]
    L. O. Chua, " Device modeling via basic nonlinear circuit elements,” IEEE Trans. Circuit Systems, vol. CAS-27, no. 11, pp. 1014–1044, Sep. 1980.
    [4]
    L. O. Chua, " Nonlinear circuit foundations for nanodevices. I. The four-element torus,” Proc. IEEE, vol. 91, no. 11, pp. 1830–1859, Nov. 2003.
    [5]
    L. O. Chua, " Resistance switching memories are memristors,” Applied Physics A, vol. 102, no. 4, pp. 765–783, 2011.
    [6]
    L. O. Chua, " The fourth element,” Proc. IEEE, vol. 100, no. 6, pp. 1920–1927, Jun. 2012. doi: 10.1109/JPROC.2012.2190814
    [7]
    T. Prodromakis, C. Toumazou, and L. O. Chua, " Two centuries of memristors,” Nature Materials, vol. 11, pp. 478–481, 2012. doi: 10.1038/nmat3338
    [8]
    S. P. Adhikari, M. P. Sah, K. Hyongsuk, and L. O. Chua, " Three fingerprints of memristor,” IEEE Trans. Circuits and Systems, vol. 60, no. 11, pp. 3008–3021, Nov. 2013. doi: 10.1109/TCSI.2013.2256171
    [9]
    D. B. Strukov, G. S. Snider, D. R. Stewart, and S. R. Williams, " The missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008. doi: 10.1038/nature06932
    [10]
    J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, " ‘Memristive’ switches enable ‘stateful’ logic operations via material implication,” Nature, vol. 464, no. 7290, pp. 873–878, 2010. doi: 10.1038/nature08940
    [11]
    I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, and R. Waser, " Nanobatteries in redox-based resistive switches require extension of memristor theory,” Nature Communications 4, pp. Article No: 1771, Nov. 2013.
    [12]
    Y. F. Pu, " Measurement units and physical dimensions of fractance-part i: position of purely ideal fractor in Chua’s axiomatic circuit element system and fractional-order reactance of fractor in its natural implementation,” IEEE Access, vol. 4, pp. 3379–3397, 2016. doi: 10.1109/ACCESS.2016.2585818
    [13]
    Y. F. Pu, " Measurement units and physical dimensions of fractance-part ii: fractional-order measurement units and physical dimensions of fractance and rules for fractors in series and parallel,” IEEE Access, vol. 4, pp. 3398–3416, 2016. doi: 10.1109/ACCESS.2016.2585819
    [14]
    Y. F. Pu, and X. Yuan, " Fracmemristor: fractional-order memristor,” IEEE Access, vol. 4, pp. 1872–1888, 2016. doi: 10.1109/ACCESS.2016.2557818
    [15]
    Y. F. Pu, X. Yuan, and B. Yu., " Analog circuit implementation of fractional-order memristor: arbitrary-order lattice scaling fracmemristor,” IEEE Trans. Circuits and Systems I:Regular Papers, vol. 65, no. 9, pp. 2903–2916, Sept. 2018. doi: 10.1109/TCSI.2018.2789907
    [16]
    http://www.bioinspired.net/neuro-bit-memristors.html
    [17]
    D. S. Yu, Y. Liang, H. Chen, and H. H. C. Iu, " Design of a versatile memcapacitor emulator without grounded restriction,” IEEE Trans. Circuits and Systems, vol. 60, no. 4, pp. 207–211, Apr. 2013. doi: 10.1109/TCSII.2013.2240879
    [18]
    M. P. Sah, R. K. Budhathoki, C. Yang, and H. Kim, " Expandable circuits of mutator-based memcapacitor emulator,” Int. J. Bifurcation and Chaos, vol. 23, no. 5, pp. Article No: 1330017, 2013. doi: 10.1142/S0218127413300176
    [19]
    B. C. Bao, J. P. Xu, G. H. Zhou, Z. H. Ma, and L. Zou, " Chaotic memristive circuit: equivalent circuit realization and dynamical analysis,” Chinese Physics B, vol. 20, no. 12, pp. Article No: 120502, 2011. doi: 10.1088/1674-1056/20/12/120502
    [20]
    Z. Biolek, D. Biolek, and V. Biolkova, " Computation of the area of memristor pinched hysteresis loop,” IEEE Trans. Circuits and Systems II:Express Briefs, vol. 59, no. 9, pp. 607–611, Aug. 2012. doi: 10.1109/TCSII.2012.2208670
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    Highlights

    • Although some memristor emulators are designed without grounded restriction, their input current cannot be guaranteed to be equal to the output current. In addition, the scope of applications of this Neuro-Bit memristor, which is currently the only memristor commercially available, are somewhat limited by its relatively small dynamic range of maximum ratings. Therefore, to solve these problems, this paper proposes an achievement of a large dynamic range floating memristor emulator with equal port current restriction based on a feasible transistor model.
    • The proposed large dynamic range floating memristor emulates the behavior and operates in nearly the exact way as that of a memristor, making it a feasible candidate for the floating memristor emulator. The electrical characteristics of a large dynamic range floating memristor emulator are validated by software simulation and real measurement, respectively. To enlarge the scope of application, it is designed to be feasible to convert between two-port ordinary memristor and three-port mirror one.
    • Some electrical characteristics of the large dynamic range floating memristor emulator, such as low implementation cost, low-sensitive to electrostatic discharge, freely accessible floating circuit element, large dynamic range of maximum ratings, and feasible conversion between two-port ordinary memristor and three-port mirror one, are its major advantages when compared with the Neuro-Bit memristor and other memristor emulators.

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